Table top RIE plasma etcher SI 100

SI 100 Table Top RIE Plasma Etcher The SI 100 Plasma Etcher is a powerful tool for standard RIE processes which require high flexibility in substrate handling. Productive and reliable isotropic and anisotropic resist etch processes for 4" wafers (as mainly used in GaAs technology) as well as pre-metallization etch and surface cleaning processes can be performed. This system is well proven in the production of GaAs devices. Up to seven 4" wafers can be processed in a single run.  

RIE plasma etcher with load lock SI 591

The plasma etching system SI 591 is designed for modularity and process flexibility in the area of III/V and Si processing.SENTECH's SI 591 is well proven in the most important etching processes of differnet technologies and can be accomodate a wide variety of etch processes.

It is characterized by:

• high homogeneity and excellent reproducibility of the etch processes
• vacuum load lock
• computer controlled operation
• SENTECH’s advanced plasma equipment operating software
• data logging
• through-the-wall installation
• endpoint detection

PTSA ICP plasma etcher SI 500

The SI 500 has been developed for high rate and low damage plasma etch processes, especially in III-V and microoptical applications.

It is characterized by:

• High etch rate
• Low damage
• Superior homogeneity
• (P)lanar (T)riple (S)piral (A)ntenna PTSA source
• Remote field control via serial field bus
• Applications for III-V compounds, microoptics, microsystems
• SENTECH’s plasma process systems operating software
• Through-the-wall installation
• Interferometric endpoint detection and etch depth measurement

PTSA ICP cryogenic plasma etcher SI 500 C

The SI 500 C PTSA ICP Cryo Etcher is the ideal tool for high rate etching processes in silicon micromachining, microfluidics and microoptics.

• high etch rate
• high aspect ratio
• (P)lanar (T)riple (S)piral (A)ntenna PTSA source
• down to -150ºC substrate temperature
• SENTECH’s advanced plasma equipment operating software
• through-the-wall installation
• endpoint detection

SI 500 PPD Parallel Plate PECVD Deposition System

The SI 500 PPD has been developed for pilot production and R&D for Silane based deposition processes on up to 8” wafers

It is Characterized by:

• High Etch Rate
• Stress Control
• Superior Homogeneity through Integral shower head
• Parallel Plate RF Plasma System
• Remote field control via serial field bus
• Applications for low stress SiN, SiON, high rate SiO...
• SENTECH's plasma process systems operating software
• Through-The-Wall installation
• Interferometric endpoint detection and etch depth measurementh

ICPECVD plasma deposition system SI 500 D

The SI 500 D is a high density plasma deposition system developed for ICPECVD of dielectric films.
It allows to deposit high quality SiO₂, Si₃N₄, and SiO_xN_y films at very low temperatures
(< 100ºC).

The SI 500 D is characterized by:

• (P)lanar (T)riple (S)piral
  (A)ntenna PTSA source
• High deposition rate
• Low damage
• High quality low temperature deposition of dielectrics
• (T ³ 80°C)
• Remote field control via serial field bus
• SENTECH’s plasma process systems operating software
• Through-the-wall installation

Cluster Tool

SENTECH's plasma reactors can be combined into a cluster tool.

Please contact us for configuration options and additional information

SENTECH’s plasma process systems
operating software

 Features: Automated and manual process control Recipe controlled etch processes Intelligent process control by jumps, loops, and calls in recipes Different access levels Data logging LAN and internet access Windows NT operation software