In-Situ 4000 Process Monitor

SVT Associates has developed the unique In-Situ 4000 Process Monitor for real-time measurement of temperature, growth rate and refractive index in MBE and MOCVD processes. Accurate temperature measurements from 300°C to 1200°C can be performed with accuracies better than 1°C on any opaque substrate material (Si, GaAs, Ge, InP, InSb, etc.) based on emissivity corrected pyrometry. Two wavelength reflectometry in normal or specular geometry allows thin film growth rate measurements for thickness values as low as 10 nm with a resolution better than 1 nm. The compact unit provides closed loop control for high process repeatability and can be customized to your process needs.

Applications:

• MBE Growth (VCSEL, GaN, InGaAsN, AlGaN, ...)
• MOCVD Growth (VCSEL, LED, Optical Coatings, InP Laser, GaN, AlGaN, ...)

Technical Documentation:

• Application Note 1401 (Monitoring Growth of Nitride Films on Transparent Sapphire Substrates)
• Application Note 1402 (Monitor Measurement of GaN Growth Rate as a Function of Substrate Temperature)
• In-Situ 4000 White Paper - Solving the Problems of Pyrometry and Thickness Measurement During MBE and MOCVD
• IS4K Product Data Sheet

Frequently Asked Questions for the In-Situ 4000 Process Monitor

Application Checklist to Ensure Process Compatibility

Contact SVTA for more information.