| Epitaxial
Wafers
 SVT
Associates, Inc. has been actively working on the growth and characterization
of III-Nitride materials and devices since 1992 using RF atomic nitrogen plasma
assisted molecular beam epitaxy (PA-MBE). Wafer growth and characterization
services are explained below:
III-Nitride Wafer Specifications:
| Epitaxial Layers |
GaN, AlGaN, InGaN |
| 2" Wafer Uniformity |
<2% |
| X-Ray FWHM GaN/A12O3 |
<3 arc min |
| N-Type Doping (Si) |
1017 to 1020 cm-3 |
| P-type Doping (Mg) |
up to 1019 cm-3 |
| Insulating Buffer Donor Density |
Nd <1016 cm-3 |
| MODFET Hall Mobility* |
>1500 cm2 /Vs (300K) |
| |
>4000 cm2 /Vs (77K) |
| Substrates |
Sapphire, SiC, Si |
* HEMT characteristics depend on buffer and active layer structure.
III-Nitride Epitaxial Services:
- III-N growth on sapphire and silicon-carbide 2" and 3" wafers:
- GaN (n-type, p-type, or insulating)
- Custom ternary & quaternary InAlGaN films
- High-frequency, high-power and low-noise III-N transistors:
- High electron mobility transistors (HEMTs)
- Bipolar junction transistors (HBTs & BJTs)
- AlxGa1-xN high-efficiency, solar-blind UV photodetectors
(PD):
- Schottky and p-i-n PDs with cutoff wavelength from 365 down to 250
nm
- Special structures including arrays, bandpass and MQW detectors
- Custom epitaxial layers and structures, including:
- Doped and undoped superlattice structures
- Resonant tunneling structures (RTDs)
- Wafer characterization:
- In-situ cathodoluminescence
- AFM and X-ray characterization
- CV and Hall measurements
Contact SVTA for more information. |
