RF Plasma Sources

SVT Associates RF Atom Sources produce low energy beams of atomic nitrogen, oxygen or hydrogen for state-of-the-art thin film growth. Due to their proprietary design, high cracking efficiencies, ultra-low contamination levels and zero ion content are realized. Growth rates as high as 4µm/h can be achieved under optimum growth conditions. Variable aperture plates ensure excellent flux uniformities for high production yield even for large wafer sizes. A variety of options are available to enhance the performance of the sources and to ease operation in a production environment.

Three model sizes are available for research and production applications:

• RF 2.75: Mini RF Plasma Source for Research
• RF 4.50: High Growth Rate RF Plasma Source
• RF 6.00: Production RF Plasma Source

A variety of Plasma Source Options are available for automation and process control:

• RF Generator (600W - 1200W)
• Integral Pneumatic and Manual Shutter
• Ion Deflection Power Supply
• Optical Plasma Monitor for Plasma Diagnostics and Flux Control
• Ion Extraction Grids for Ion Beam Assisted Growth

Applications:

• Oxide Growth (High Tc Superconductors, Optical Coatings, Dielectrics, ...)
• Low Temperature Oxidation (Thin Oxide Films Al2O3, SiO2, ...)
• Nitriding GaN, AlN, InN, SiN, AlGaN
• N-Doping GaInAsN
• Hydrogen Cleaning

Technical Documentation:

• Application Note 1001 (High Growth Rate RF Nitrogen Source)
• Robo-RF Plasma Control System

Contact SVTA for more information.